System and method of sending correction data to a buffer of a non-volatile memory

ABSTRACT

A method includes receiving data from a buffer of a non-volatile memory. An error correction coding (ECC) operation is initiated to correct bit errors in the data. Correction data is sent to the buffer to correct the bit errors in the data.

CLAIM OF PRIORITY

The present application claims priority from Indian Patent ApplicationNo. 551/CHE/2012 filed on Feb. 15, 2012, which is incorporated herein inits entirety.

FIELD OF THE DISCLOSURE

The present disclosure is generally related to correcting data at anon-volatile memory.

BACKGROUND

Non-volatile memory devices, such as universal serial bus (USB) flashmemory devices or removable storage cards, have allowed for increasedportability of data and software applications. Flash memory devices canenhance data storage density and cost efficiency by storing multiplebits in each flash memory cell.

During a memory scrubbing operation at a memory location of anon-volatile memory, data is typically copied and moved to a differentmemory location. Before the data is moved, errors that may haveaccumulated in the data may be corrected by sending the data to an errorcorrection coding (ECC) engine at a controller of the memory device.After the data is corrected, the data may be sent back to thenon-volatile memory and stored to a different memory location at thenon-volatile memory. Read or write performance of the memory device inresponse to a command to store user data to the non-volatile memory orto read user data from the non-volatile memory may be impacted byongoing data transfer to and from the controller during a memoryscrubbing operation.

SUMMARY

A data copying operation is performed by receiving, at a controller,data from a buffer of a non-volatile memory and performing an errorcorrection coding (ECC) operation to correct bit errors in the data.Correction data is sent to the buffer to correct the bit errors in thedata. The correction data includes a corrected bit and overwrites aportion of the data stored at the buffer that includes a correspondinguncorrected bit error.

A decrease in latency and power needed for the data copying operationmay be achieved by sending the correction data to the buffer andoverwriting a portion of the data stored at the buffer to correct biterrors in the data as compared to transferring all of the data back tothe buffer.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram of an illustrative embodiment of a system tosend correction data to a buffer of a non-volatile memory;

FIG. 2 is a diagram illustrating additional detail of the buffer of thesystem of FIG. 1;

FIG. 3 illustrates a first representative command sequence that may besent to a buffer of a non-volatile memory to correct bit errors in datastored at the buffer;

FIG. 4 illustrates a second representative command sequence that may besent to a buffer of a non-volatile memory to correct bit errors in datastored at the buffer; and

FIG. 5 is a flow diagram illustrating a particular embodiment of amethod of sending correction data to a buffer of a non-volatile memory.

DETAILED DESCRIPTION

Systems and methods of sending correction data to a buffer of anon-volatile memory are disclosed. Data is received from a buffer of thenon-volatile memory and an error correction coding (ECC) operation isinitiated to correct bit errors in the data. Correction data generatedby the ECC operation is sent to the buffer to correct the bit errors inthe data.

Referring to FIG. 1, a particular illustrative embodiment of a systemconfigured to send correction data to a buffer of a non-volatile memoryis depicted and generally designated 100. The system 100 includes a datastorage device 102 coupled to a host device 130 via a bus 150. The datastorage device 102 includes a non-volatile memory die 104 coupled to acontroller 106 via a second bus 128.

The host device 130 may be configured to provide data to be stored at anon-volatile memory 108 of the non-volatile memory die 104 or to requestdata to be read from the non-volatile memory 108. For example, the hostdevice 130 may include a mobile telephone, a music or video player, agaming console, an electronic book reader, a personal digital assistant(PDA), a computer such as a laptop computer, a notebook computer, or atablet, an electronic device, or any combination thereof.

The data storage device 102 may be a memory card, such as a SecureDigital SD® card, a microSD® card, a miniSD™ card (trademarks of SD-3CLLC, Wilmington, Del.), a MultiMediaCard™ (MMC™) card (trademark ofJEDEC Solid State Technology Association, Arlington, Va.), or aCompactFlash® (CF) card (trademark of SanDisk Corporation, Milpitas,Calif.). As another example, the data storage device 102 may be embeddedmemory in the host device 130, such as eMMC® (trademark of JEDEC SolidState Technology Association, Arlington, Va.) and eSD memory, asillustrative examples.

The non-volatile memory die 104 includes the non-volatile memory 108,read/write circuitry 110, and a buffer 112. The non-volatile memory 108may be a non-volatile memory of a flash device, such as a NAND flashdevice, a NOR flash device, or any other type of flash device. Theread/write circuitry 110 may be configured to read data 120 from a firstlocation 114 of the non-volatile memory 108 and to write the data 120 tothe buffer 112. The read/write circuitry 110 may be configured to writethe data 120 from the buffer 112 to the non-volatile memory 108, such asto a second location 116.

The controller 106 may be configured to receive memory access requestsfrom the host device 130 and to process data, such as the data 120, readfrom the non-volatile memory 108. The controller 106 includes an errorcorrection coding (ECC) engine 122 and an ECC random access memory (RAM)124.

The controller 106 may be configured to receive the data 120 from thebuffer 112, initiate an ECC operation to correct bit errors in the data120, and send correction data 132 to the buffer 112 to correct the biterrors in the data 120 stored at the buffer 112. For example, thecontroller 106 may be configured to cause the data 120 to be read fromthe first location 114 of the non-volatile memory 108 and written to andstored in the buffer 112. To illustrate, the controller 106 may beconfigured to cause the read/write circuitry 110 to read the data 120from the first location 114 of the non-volatile memory 108 and to writethe data 120 that was read from first location 114 to the buffer 112.The ECC RAM 124 may be configured to receive the data 120 from thebuffer 112 via the second bus 128. The ECC engine 122 may be configuredto perform an ECC operation to correct bit errors in the data 120.

For example, the data 120 may undergo a parity check “on-the-fly” whilebeing sent from the buffer 112 to the ECC RAM 124. The ECC engine 122may perform an ECC operation to identify bit errors and a bit errorlocation 126 in the data 120. The ECC engine 122 may be configured tocorrect the bit errors in the data 120. The controller 106 may send thecorrection data 132 to the buffer 112 to correct the bit errors at thebit error location 126 in the data 120 stored at the buffer 112.

The correction data 132 may include at least one corrected bit and mayoverwrite a portion of the data 120 stored at the buffer 112. Theportion may correspond to window replacement data 134 as described infurther detail with respect to FIG. 2. Prior to receiving the correctiondata 132, the buffer 112 may include an uncorrected bit error thatcorresponds to the corrected bit error in the correction data 132, suchthat when the corrected bit error overwrites the uncorrected bit error,corrected data 140 is formed. A number of bits of the correction data132 sent by the controller 106 via the second bus 128 may correspond toa size of the second bus 128. For example, if the size of the second bus128 is 8-bits (i.e., 8-bits of data transferred per bus cycle), then thecorrection data 132 may be sent on a byte-by-byte basis. Otherimplementations, such as a 16-bit bus, a 32-bit bus, or any other sizebus, may be used.

The controller 106 may be configured to cause the corrected data 140 tobe programmed to the non-volatile memory 108. For example, thecontroller 106 may be configured to cause the read/write circuitry 110to read the corrected data 140 from the buffer 112 and to write thecorrected data 140 to the second location 116 of the non-volatile memory108. The second location 116 may be different than the first location114. In another implementation, the second location 116 may be the sameas the first location 114.

During operation, the host device 130 may instruct the controller 106 toread the data 120 from the first location 114 of the non-volatile memory108. The controller 106 may receive the data 120 from the buffer 112,initiate an ECC operation to correct bit errors in the data 120, andsend the corrected data to the host device 130. The controller 106 mayalso send the correction data 132 to the buffer 112 to correct the biterrors in the data 120 stored at the buffer 112. The correction data 132may overwrite a portion of the data 120 stored at the buffer 112.Alternatively or in addition, the data 120 may be read as part of ahousekeeping operation, such as a memory scrubbing operation, ratherthan in response to a request from the host device 130.

By sending the correction data 132 to the buffer 112 to correct the biterrors in the data 120 stored at the buffer 112, a decrease in latencyand power needed for a data copying operation may be achieved. Forexample, because all of the data 120 originally sent from the buffer 112to the controller 106 for error correction does not need to be sent backto the buffer 112 after the ECC operation is performed, and instead onlyportions of the data 120 that include corrected bits are sent back tothe buffer 112, latency may be decreased and power may be reduced.

Referring to FIG. 2, a particular illustrative embodiment of the systemof FIG. 1 showing additional detail of the buffer 112 is depicted andgenerally designated 200. The system 200 of FIG. 2 illustrates adetailed view of the buffer 112 and the correction data 132 of FIG. 1.The correction data 132 may be sent to the buffer 112 via the second bus128 to correct bit errors in the data 120 stored at the buffer 112. Forexample, the correction data 132 may include at least one corrected biterror 202 that corresponds to an uncorrected bit error at the bit errorlocation 126 (i.e., illustrated as having a value of “0”) and mayoverwrite a portion of the data 120 stored at the buffer 112.

To illustrate, the data 120 stored at the buffer 112 may contain a biterror identified at the bit error location 126. The correction data 132may include the at least one corrected bit 202 (i.e., illustrated ashaving a value of “1”) that corresponds to the uncorrected bit error(i.e., illustrated as having a value of “0”) at the bit error location126. The correction data 132 may be included within the windowreplacement data 134. The window replacement data 134 may correspond toa size of the second bus 128. For example, a number of bits of thecorrection data 132 within the window replacement data 134 maycorrespond to a size of the second bus 128. In addition, the windowreplacement data 134 may have a size that is less than a size of thedata 120 stored at the buffer 112. As such, the correction data 132 mayoverwrite a portion of the data 120 stored at the buffer 112corresponding to the size of the window replacement data 134. Toillustrate, a portion of the data 120 stored at the buffer 112 (i.e.,illustrated as the data “1 0 0 1 1”) may be overwritten by the windowreplacement data 134 (i.e., illustrated as the data “1 1 0 1 1”). Otherdata 204 stored at the buffer 112 that is not within the windowreplacement data 134 is not disturbed.

Alternatively or in addition, the correction data 132 may include two ormore corrected bit errors. For example, two or more corrected bit errorsmay fit within the window replacement data 134. In that case, when theportion of the data 120 stored at the buffer 112 is overwritten by thewindow replacement data 134, the two or more corrected bit errors maycorrect two or more uncorrected bit errors in the buffer 112 thatcorrespond to the two or more corrected bit errors in the correctiondata 132.

A decrease in latency and power needed for a data copying operation maybe achieved by sending the correction data 132 to the buffer 112 andoverwriting a portion of the data 120 stored at the buffer 112 tocorrect bit errors in the data 120, rather than sending the entirecorrected contents of the ECC RAM 124 received from the ECC engine 122back to the buffer 112.

For example, ECC data may typically contain 2292 (e.g., 14 (header)+2048(data)+230 (ECC)) bytes. When the ECC data is corrected via the ECCoperation and transferred back to non-volatile memory, 2292 bytes may besent back. However, a decrease in latency and power needed for the datacopying operation may be achieved by sending the correction data 132 tothe buffer 112 and overwriting a portion of the data 120 stored at thebuffer 112 to correct bit errors in the data as compared to transferringall of the 2292 ECC data bytes. For example, data may be read from thenon-volatile memory 108, stored in the buffer 112 of the non-volatilememory 108, and sent to the ECC engine 122 of the data storage device102. After the data 120 is corrected by the ECC operation, thecorrection data 132 may be sent to the buffer 112 and may overwrite aportion of the data 120 stored at the buffer 112 to correct the biterrors in the data 120 stored at the buffer 112. The data may thereafterbe programmed to a different memory location at the non-volatile memory108. The correction data may contain substantially fewer bytes than the2292 ECC bytes described above, thereby decreasing latency and powerconsumed during the data copying operation.

For example, if an error threshold is 100 and the correction data is asingle byte of correction data, theoretically only 100 bytes ofcorrection data may need to be sent back to the non-volatile memory 108after the ECC operation is performed. However, sending bytes ofcorrection data will likely cause “overhead”, such as sending ofcommands (CMD) and/or address (ADDR) information. Overhead for sending 1byte of correction data may be 6 bytes (e.g., 1 byte CMD+5 bytes ADDR),thus effectively 700 bytes of correction data may be sent to thenon-volatile memory to correct 100 bytes of data. Sending 700 bytes ofcorrection data and overhead corresponds to approximately a 69%reduction in latency as compared to sending 2292 bytes of ECC data. A“young” memory typically experiences fewer errors than an “old” memory.As a result, fewer bytes of correction data may be sent per ECC word ina young memory as compared to an old memory, which may result in agreater reduction in latency than 69%. Sending fewer bytes of correctiondata will also result in a reduction in power.

Data correction can be performed by sending “special” commands tooverwrite a particular data byte in the buffer. For example, FIG. 3illustrates a representative command sequence 300 that may be sent to abuffer, such as the buffer 112 of FIG. 2, to correct bit errors in thedata 120 stored at the buffer 112. For example, sending the correctiondata 132 may include sending a command 310 to replace a portion of thedata 120 stored at the buffer 112 with a corrected version of theportion of the data 120. The other data 204 stored at the buffer 112that is not within the window replacement data 134 is not disturbed. Thecommand sequence 300 may include the correction data 132, a memoryaddress 304, and an opcode 306. The memory address 304 and the opcode306 may form the command 310.

The opcode 306 may specify an operation to be performed. For example,the opcode 306 may correspond to an opcode of a random data inputopcode, such as a CMD 85 opcode, that may enable correction of a singlephysical page of multiple multi-level-cell (MLC) pages in the buffer112. In one implementation, the command sequence 300 may be a CMD85-ADDR*5-DATA command sequence.

The correction data 132 may be a single byte of correction data.Therefore, 6 bytes of overhead data (e.g., 5 bytes for the memoryaddress 304 and 1 byte for the opcode 306) are used to correct 1 byte ofdata. In contrast, replacing the entirety of the data 120 in the buffermay require the 2292 ECC bytes of data to correct 1 byte of data asexplained above.

The memory address 304 may correspond to an address at the non-volatilememory 108 of FIG. 1 of the portion of the data 120 containing the biterrors. For example, the memory address 304 may correspond to an addressthat locates data within the first location 114 from which the data 120is read. The memory address 304 may include a memory address of aportion of the data 120 stored at the buffer 112 to be replaced with acorrected version of the portion of the data. To illustrate, thenon-volatile memory 108 may be a 137 gigabyte (GB) memory and the memoryaddress 304 may include a 5-byte address to specify a particular byte inthe 137 GB memory.

FIG. 4 illustrates a second representative command sequence 400 that maybe sent to a buffer, such as the buffer 112 to correct bit errors in thedata 120 stored at the buffer 112 with reduced overhead as compared toFIG. 3. For example, sending the correction data 132 may include sendinga command 410 to replace a portion of the data 120 stored at the buffer112 with a corrected version of the portion of the data 120. The otherdata 204 stored at the buffer 112 that is not within the windowreplacement data 134 is not disturbed. The command sequence 400 mayinclude the correction data 132, a buffer address 404, and an opcode406. The buffer address 404 and the opcode 406 may form the command 410.

The buffer address 404 may correspond to an address at the buffer 112 ofFIG. 1 containing the bit errors (as compared to the memory address 304of FIG. 3). For example, the buffer address 404 may correspond to alocation in the buffer 112 of a portion of the data 120 stored at thebuffer 112 to be replaced with a corrected version of the portion of thedata. The buffer address 404 may have fewer bits than the memory address304 of FIG. 3. For example, where a page size is 2 kilobytes (KB), thebuffer address may be a 2-byte address to locate the portion of the data120 within the buffer 112 to be replaced. Other implementations, such asa 3-byte address, a 4-byte address, or any other size address, may beused.

The opcode 406 may specify an operation to be performed. For example,the opcode 406 may be interpreted by logic at the non-volatile memorydie 104 to replace a byte value in the buffer 112 with the correctiondata 132.

FIG. 5 depicts a flowchart that illustrates an embodiment of a method500 of sending correction data to a buffer of a non-volatile memory. Themethod 500 may be performed by the data storage device of FIG. 1.

Data may be read from a first location of a non-volatile memory, at 502.For example, the read/write circuitry 110 may read the data 120 from thefirst location 114 of the non-volatile memory 108.

The data may be stored in a buffer, at 504. For example, the read/writecircuitry 110 may write the data 120 that was read from first location114 to the buffer 112.

The data may be received from the buffer, at 506. For example, thecontroller 106 may be configured to receive the data 120 from the buffer112 via the second bus 128 and populate the ECC RAM 124 with thereceived data 120.

An error correction coding (ECC) operation to correct bit errors in thedata may be initiated, at 508. For example, the controller 106 mayinitiate the ECC operation and the ECC engine 122 may perform the ECCoperation to correct bit errors in the data 120 at the ECC RAM 124.After the ECC operation, the ECC RAM 124 may contain an error correctedversion of the data 120.

Correction data may be sent to the buffer to correct the bit errors inthe data stored at the buffer to form corrected data, at 510. Forexample, the ECC engine 122 may correct the bit errors in the data 120and provide the correction data 132. The controller 106 may send thecorrection data 132 to the buffer 112 to correct the bit errors at thebit error location 126 in the data 120 stored at the buffer 112. Thecontroller 106 may send the correction data 132 by sending a command,such as the command 310 of FIG. 3 or the command 410 of FIG. 4, toreplace a portion (e.g., the window replacement data 134) of the data120 stored at the buffer 112 with a corrected version of the portion ofthe data 120.

The corrected data may be programmed to the non-volatile memory, at 512.For example, the read/write circuitry 110 may read the corrected data140 from the buffer 112 and write the corrected data 140 that was readfrom the buffer 112 to the non-volatile memory 108.

Because only a portion of the data 120 originally sent from the buffer112 to the controller 106 for error correction needs to be sent back tothe buffer 112 after the ECC operation is performed rather than all ofthe data 120, latency may be decreased and power may be reduced.

Although various components depicted herein are illustrated as blockcomponents and described in general terms, such components may includeone or more microprocessors, state machines, or other circuitsconfigured to enable a data storage device, such as the data storagedevice 102 of FIG. 1 to perform the particular functions attributed tosuch components, or any combination thereof. For example, the controller106 of FIG. 1 may represent physical components, such as controllers,processors, state machines, logic circuits, or other structures to sendcorrection data 132 to the buffer 112 to correct bit errors in data 120stored at the buffer 112.

The controller 106 may be implemented using a microprocessor ormicrocontroller programmed to generate control information and toinstruct operations. In a particular embodiment, the controller 106includes a processor executing instructions that are stored at thenon-volatile memory 108. Alternatively, or in addition, executableinstructions that are executed by the processor may be stored at aseparate memory location that is not part of the non-volatile memory108, such as at a read-only memory (ROM).

In a particular embodiment, the data storage device 102 may be aportable device configured to be selectively coupled to one or moreexternal devices. For example, the data storage device 102 may be aremovable device such as a universal serial bus (USB) flash drive or aremovable memory card. However, in other embodiments, the data storagedevice 102 may be attached or embedded within one or more host devices,such as within a housing of a portable communication device. Forexample, the data storage device 102 may be within a packaged apparatus,such as a wireless telephone, a personal digital assistant (PDA), agaming device or console, a portable navigation device, a computer, orother device that uses internal non-volatile memory. In a particularembodiment, the data storage device 102 includes a non-volatile memory,such as a Flash memory (e.g., NAND, NOR, Multi-Level Cell (MLC), Dividedbit-line NOR (DINOR), AND, high capacitive coupling ratio (HiCR),asymmetrical contactless transistor (ACT), or other Flash memories), anerasable programmable read-only memory (EPROM), an electrically-erasableprogrammable read-only memory (EEPROM), a read-only memory (ROM), aone-time programmable memory (OTP), or any other type of memory.

The illustrations of the embodiments described herein are intended toprovide a general understanding of the various embodiments. Otherembodiments may be utilized and derived from the disclosure, such thatstructural and logical substitutions and changes may be made withoutdeparting from the scope of the disclosure. This disclosure is intendedto cover any and all subsequent adaptations or variations of variousembodiments.

The above-disclosed subject matter is to be considered illustrative, andnot restrictive, and the appended claims are intended to cover all suchmodifications, enhancements, and other embodiments, which fall withinthe scope of the present disclosure. Thus, to the maximum extent allowedby law, the scope of the present invention is to be determined by thebroadest permissible interpretation of the following claims and theirequivalents, and shall not be restricted or limited by the foregoingdetailed description.

What is claimed is:
 1. A method comprising: receiving data from a bufferof a non-volatile memory; initiating an error correction coding (ECC)operation to correct bit errors in the data; and sending correction datato the buffer to correct the bit errors in the data.
 2. The method ofclaim 1, wherein the correction data includes at least one corrected bitand overwrites a portion of the data stored at the buffer that includesa corresponding uncorrected bit error to form corrected data.
 3. Themethod of claim 2, further comprising programming the corrected data tothe non-volatile memory.
 4. The method of claim 3, further comprising:reading the data from a first location of the non-volatile memory; andstoring the data in the buffer, wherein the corrected data is programmedto a second location of the non-volatile memory that is different thanthe first location of the non-volatile memory.
 5. The method of claim 1,wherein sending the correction data includes sending a command toreplace a portion of the data stored at the buffer with a correctedversion of the portion of the data.
 6. The method of claim 5, whereinthe command includes a memory address corresponding to a location withinthe memory that stores the portion.
 7. The method of claim 6, whereinsending the command includes sending a CMD 85-ADDR*5-DATA commandsequence.
 8. The method of claim 5, wherein the command includes abuffer address corresponding to a location within the buffer that storesthe portion.
 9. The method of claim 1, wherein sending the correctiondata includes sending the correction data on a byte-by-byte basis. 10.The method of claim 1, wherein the non-volatile memory is a flashmemory.
 11. A data storage device comprising: a non-volatile memoryincluding a buffer; and a controller configured to: receive data fromthe buffer; initiate an error correction coding (ECC) operation tocorrect bit errors in the data; and send correction data to the bufferto correct the bit errors in the data.
 12. The data storage device ofclaim 11, wherein the correction data includes at least one correctedbit and overwrites a portion of the data stored at the buffer thatincludes a corresponding uncorrected bit error to form corrected data.13. The data storage device of claim 12, wherein the controller isfurther configured to program the corrected data to the non-volatilememory.
 14. The data storage device of claim 13, wherein the controlleris further configured to: cause the data to be read from a firstlocation of the non-volatile memory; cause the data to be stored in thebuffer; and cause the corrected data to be programmed to a secondlocation of the non-volatile memory that is different than the firstlocation of the non-volatile memory.
 15. The data storage device ofclaim 11, wherein the controller comprises an ECC engine configured toperform the ECC operation.
 16. The data storage device of claim 11,wherein the controller sends the correction data to the non-volatilememory via a bus coupled between the controller and the non-volatilememory, wherein a number of bits of the correction data sent by thecontroller corresponds to a size of the bus.
 17. The data storage deviceof claim 11, wherein the controller sends the correction data by sendinga command to replace a portion of the data stored at the buffer with acorrected version of the portion of the data.
 18. The data storagedevice of claim 17, wherein the command includes a memory addresscorresponding to a location within the memory that stores the portion.19. The data storage device of claim 18, wherein sending the commandincludes sending a CMD 85-ADDR*5-DATA command sequence.
 20. The datastorage device of claim 17, wherein the command includes a bufferaddress corresponding to a location within the buffer that stores theportion.